Industrial Automation Magazine India

1200V SiC-MOSFETs

Published on : Thursday 03-12-2020

Help reduce power consumption and physical size of power-supply systems.

Mitsubishi Electric Corporation recently announced the launch of a new series of silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs), the N-series of 1200V SiC-MOSFETs in a TO-247-4 package, which achieves 30% less switching loss compared to the existing TO-247-3 package2 products. The new series will help to reduce the power consumption and physical size of power-supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers and photovoltaic power systems. Sample shipments will start this November.

Product Features
Four-pin package helps reduce power consumption and physical size of power-supply systems

SiC-MOSFET chip with good figure of merit (FOM3) of 1,450mΩ-nC and high self-turn-on tolerance is mounted on TO-247-4 package, which is equipped with independent driver source terminal as well as conventional 3-pin package.

Adopts four-pin package to reduce parasitic inductance, a problem in high-speed switching. 

Eliminating gate-source voltage drops due to current variations helps to reduce switching loss by approximately 30% compared with TO-247-3 products.

Using a higher carrier frequency4 to drive the new power semiconductors helps to reduce switching-power loss, enabling smaller and simpler cooling systems as well as smaller reactors and other peripheral components, thereby helping to reduce the power consumption and physical size of overall power-supply systems.

Performance index of power MOSFETs, calculated by multiplying on-resistance by gate-drain charge (100°C junction temperature). Smaller values indicate better performance.
4Frequency that determines the ON/OFF timing of switching element in inverter circuit

New lineup includes models compatible with Automotive Electronics Council's AEC-Q101 standards for use not only in industrial applications, e.g. photovoltaic systems, but also EV applications.

Creepage distance (shortest distance over surface between two conductive parts) between drain terminal and source terminal made wider than in TO-247-3 package products for more flexible application, including in outdoor installations where dust and dirt easily accumulate.

Mitsubishi Electric India Pvt Ltd. Email: [email protected]