High-Power Semiconductor Solutions for Fast EV Charging
Published on : Monday 05-12-2022
Yogesh Bhatarkar presents an overview of the latest developments for high-power semiconductor solutions for fast EV charging.
Electric vehicles are a need for the future to reduce CO2 emissions which are directly or indirectly affecting global warming. Basically, EVs are there to limit use of raw materials, i.e., gasoline. Similarly, raw materials for EVs are electricity and its storage in vehicles for the long run, i.e., batteries. Both electricity and batteries cannot be used as it is. Regulated power supply needs to feed EV motors to run it more efficiently. This can be provided with proper charging solutions. More kilometres to travel with EVs need more electricity to be stored in EV batteries. So, more EV charging capacity would be required to charge the batteries assigned for that kilometre range.
2-wheeler electric vehicles, 3-wheeler electric vehicles, 4-wheeler electric vehicles or an EV bus have different capacities of their batteries, so charging also needs to be done as per the kWH range of the batteries. In today’s generation, time is the most important consideration, so fast charging is an important factor to be considered as well which costs more than the traditional and slow chargers. Slow chargers nowadays take a minimum of around 8 hrs to charge a particular electric vehicle to cover a minimum distance of 80km for a day.
With fast chargers available in India, charging time is reduced to a minimum 1 hour, thanks to the availability and usage of advanced and high-power semiconductors. Making EV chargers which can reduce the charging time to 10 to 15 minutes, also called Ultrafast Chargers can prove to be useful as per the current requirements. Also, ultrafast chargers need to be modular or compact to save space for charging stations. And it should be under a limited budget to be easily accessible and available throughout the City and Intercity.
To achieve the ideal required space and cost, Mitsubishi Electric Semiconductors and Devices offer the high-power semiconductor solution in terms of conventional silicon 600V and 1200V IGBTs (limited to 20kHz switching frequency), Silicon High Frequency TH/NFH 1200V IGBTs (up to 60kHz Fsw), SIC Hybrid 1200V IGBTs (for up to 60 kHz Fsw and lower losses and compact design), full SIC module and SIC MOSFETs (0-100 kHz Fsw). Maximum is the achievable switching frequency of semiconductors more compact and high-power EV charger can be achieved.
1200V SIC MOSFETs are for compact and modular design of 15-20-30 kW EV chargers and can make ultrafast chargers suitable for 150-300 kW. This device will help to reduce the power consumption and physical size of chargers requiring high-voltage conversion.
Full SIC modules again give more flexibility to achieve power conversion in EV chargers at 0-100kHz switching frequency; thereby, making more compact and high-power EV charging solutions.
Mitsubishi Electric Si and SIC Hybrid 1200V High Frequency IGBT Module gives approximately 40% loss reduction and contributes to higher efficiency, smaller size and weight reduction of EVchargers. Modular design or single charger of higher kW can make it possible to obtain EV chargers of compact size with switching frequency of 30-60 kHz. Silicon NFH Series IGBTs also give more flexibility for the usage with lower cost solutions as compared to SIC modules.
Mitsubishi Electric have been looking for EV charger solutions, design houses and OEMs from their Semiconductor range for making a more robust and wide range of EV chargers, which can contribute to develop better charging infrastructure for consumers and increase their approach towards buying electric vehicles.
Yogesh Bhatarkar is power electronics professional in the field of power semiconductor application like automotive especially electric vehicle business and support to industrial, renewable and other electronic power controls application.
